BD950F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD950F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220F
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BD950F datasheet
bd950f bd952f bd954f bd956f.pdf
isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION DC Current Gain- h = 40(Min)@ I = -500mA FE C Complement to Type BD949F/951F/953F/955F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT BD9
bd949 bd950 bd951 bd952 bd953 bd954 bd955 bd956.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS BD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2
bd950.pdf
isc Silicon PNP Power Transistor BD950 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = -500mA FE C Complement to Type BD949 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Otros transistores... BD946F , BD947 , BD947F , BD948 , BD948F , BD949 , BD949F , BD950 , MJE350 , BD951 , BD951F , BD952 , BD952F , BD953 , BD953F , BD954 , BD954F .
History: 3DD101E
History: 3DD101E
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