BD950F Datasheet and Replacement
Type Designator: BD950F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220F
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BD950F Datasheet (PDF)
bd950f bd952f bd954f bd956f.pdf

isc Silicon PNP Power Transistor BD950F/952F/954F/956FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -500mAFE CComplement to Type BD949F/951F/953F/955FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD9
bd949 bd950 bd951 bd952 bd953 bd954 bd955 bd956.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD949, BD951, BD953, BD955BD950, BD952, BD954, BD956BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORSBD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORSPower Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR12
bd950.pdf

isc Silicon PNP Power Transistor BD950DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -500mAFE CComplement to Type BD949Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: TP3564 | BCP627A | TP3250 | TP9380 | TP3711 | BD805
Keywords - BD950F transistor datasheet
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History: TP3564 | BCP627A | TP3250 | TP9380 | TP3711 | BD805



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