2N2907CSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2907CSM
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: LCC3
Búsqueda de reemplazo de transistor bipolar 2N2907CSM
2N2907CSM Datasheet (PDF)
mtp2n2907a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2907A/DAmplifier TransistorPNP SiliconP2N2907ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 60 Vdc 3CollectorBase Voltage VCBO 60 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 5.0 VdcTO92 (TO226AA)Collector Current
2n2907 2n2907a 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2907; 2N2907APNP switching transistors1997 May 30Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistors 2N2907; 2N2907AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 emitte
2n2907ahr.pdf
2N2907AHRHi-Rel 60 V, 0.6 A PNP transistorDatasheet - production dataFeaturesParameter Value123BVCEO 60 V TO-18IC (max) 0.6 A33HFE at 10 V - 150 mA > 10041122 Hermetic packagesLCC-3 UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. European preferred part list EPPLFigure 1. Internal schematic diagram DescriptionT
2n2904-2n2905-2n2906-2n2907.pdf
2N2904/2N29052N2906/2N2907GENERAL PURPOSE AMPLIFIERS AND SWITCHESDESCRIPTIONThe 2N2904, 2N2905, 2N2906 and 2N2907 are si-licon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904, 2N2905) and in Jedec TO-18 (for2N2906 and 2N2907) metal cases. They are desi-gned for high-speed saturated switching and gene-ral purpose applications.2N2904/2N2905 approved to CECC 50002-
2n2905a 2n2907a.pdf
2N2905A2N2907ASMALL SIGNAL PNP TRANSISTORSDESCRIPTION The 2N2905A and 2N2907A are silicon PlanarEpitaxial PNP transistors in Jedec TO-39 (for2N2905A) and in Jedec TO-18 (for 2N2907A)metal case. They are designed for high speedsaturated switching and general purposeapplications.TO-18 TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit
2n2906 2n2907.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n2907 2n2907a to-18.pdf
MCC2N2907TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2N2907ACA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features High current (max.600mA) Low voltage (max.60V) PNP Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates TransistorsRoHS Compliant. See ordering information) Maximum Ratings
p2n2907a.pdf
P2N2907AAmplifier TransistorPNP SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector--Emitter Voltage VCEO --60 VdcCollector--Base Voltage VCBO --60 Vdc3Emitter--Base Voltage VEBO --5.0 VdcEMITTERCollector Current -- Continuous IC --600 mAdcTotal Device Dissipation @ TA =25C PD 625 mW
2n2907aub.pdf
Product Bulletin JANTX, JANTXV, 2N2907AUBSeptember 1996Surface Mount PNP General Purpose TransistorType JANTX, JANTXV, 2N2907AUBFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Emitter Voltage. . . . . .
2n2907ac3a.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907acsmcecc.pdf
2N2907ACSMSEMELABHIGH SPEED, MEDIUM POWER, PNPSWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES0.51 0.10 SILICON PLANAR EPITAXIAL PNP (0.02 0.004) 0.31rad.(0.012)TRANSISTOR3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CE
2n2907ac1a.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907ac3b.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907ac1b.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907aua.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907ac3c.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt
2n2907acsm4r.pdf
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter V
2n2907acecc.pdf
2N2907ACECCDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 0.6A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX
2n2907adcsm.pdf
2N2907ADCSMSEMELABDUAL HIGH SPEED, MEDIUM POWERPNP SWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES1.40 0.152.29 0.20 1.65 0.13 DUAL SILICON PLANAR EPITAXIAL(0.055 0.006)(0.09 0.008) (0.065 0.005)PNP TRANSISTORS2 3 HERMETIC CERAMIC
p2n2907 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907P2N2907ATO-92Plastic PackageECBDesigned for switching and linear applications, DC amplifier and driver for industrial applicationsABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise)DESCRIPTION SYMBOL P2N2907 P2N2907A UNITVCEO
2n2907al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS
2n2907aubc.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS
2n2906a 2n2907a 2n2906al 2n2907al 2n2906aua 2n2907aua 2n2906aub 2n2907aub 2n2906aubc 2n2907aubc.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua
2n2907a.pdf
2N2907A Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low Leakage current, Low collector saturation voltage. / Applications General amplifier. / Equivalent Circuit
2n2907 2n2907a.pdf
2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Col
2n2907as.pdf
SEMICONDUCTOR2N2907ASTECHNICAL DATAGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-23 package which 3is designed for low power surface mount applications.2Features1compliance with RoHS requirements. We declare that the material of product SOT 23 ORDERING INFORMATION
2n2907au.pdf
SEMICONDUCTOR2N2907AUTECHNICAL DATAGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-323/SC-70 package whichis designed for low power surface mount applications.1Features2compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING IN
Otros transistores... 2N2906AQF , 2N2906CSM , 2N2907 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , D667 , 2N2908 , 2N2909 , 2N291 , 2N2910 , 2N2911 , 2N2912 , 2N2913 , 2N2913DCSM .
Liste
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