BDS12SM Todos los transistores

 0.1. Size:41K  semelab
 bds12smd05.pdf

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 0.2. Size:41K  semelab
 bds12smd.pdf

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 9.1. Size:338K  semelab
 bds12n1b.pdf

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt

 9.2. Size:14K  semelab
 bds12ig.pdf

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 HERMETIC TO257 ISOLATED METAL PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0

 9.3. Size:338K  semelab
 bds12n1a.pdf

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt

 9.4. Size:577K  semelab
 bds12m2a.pdf

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E

 9.5. Size:210K  inchange semiconductor
 bds12.pdf

isc Silicon NPN Power Transistor BDS12 DESCRIPTION High Voltage V = 100V(Min) CEV Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM