BDS12SM - описание и поиск аналогов

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 HERMETIC TO257 ISOLATED METAL PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E

isc Silicon NPN Power Transistor BDS12 DESCRIPTION High Voltage V = 100V(Min) CEV Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM