BDS16 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BDS16
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 90 W
   Tensión colector-emisor (Vce): 120 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar BDS16

BDS16 Datasheet (PDF)

..1. Size:210K inchange semiconductor
bds16.pdf

NCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BDS16DESCRIPTIONHigh Voltage: V = 120V(Min)CEVLow Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose p

0.1. Size:41K semelab
bds16smd05.pdf

BDS16 BDS16SMD BDS16SMD05BDS17 BDS17SMD BDS17SMD05MECHANICAL DATASILICON NPN EPITAXIAL BASEDimensions in mmIN TO220 METAL ANDSMD CERAMIC SURFACE MOUNTPACKAGESFEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION)APPLICATIONS POWER LINEAR AND SWITCHINGTO220M

0.2. Size:41K semelab
bds16smd.pdf

0.3. Size:44K semelab
bds16xsmd05.pdf

BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.

0.4. Size:44K semelab
bds16x.pdf