BDS16 Datasheet, Equivalent, Cross Reference Search

   Type Designator: BDS16
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220

BDS16 Transistor Equivalent Substitute - Cross-Reference Search

BDS16 Datasheet (PDF)

..1. Size:210K inchange semiconductor
bds16.pdf

NCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BDS16DESCRIPTIONHigh Voltage: V = 120V(Min)CEVLow Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose p

0.1. Size:41K semelab
bds16smd05.pdf

BDS16 BDS16SMD BDS16SMD05BDS17 BDS17SMD BDS17SMD05MECHANICAL DATASILICON NPN EPITAXIAL BASEDimensions in mmIN TO220 METAL ANDSMD CERAMIC SURFACE MOUNTPACKAGESFEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION)APPLICATIONS POWER LINEAR AND SWITCHINGTO220M

0.2. Size:41K semelab
bds16smd.pdf

0.3. Size:44K semelab
bds16xsmd05.pdf

BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.

0.4. Size:44K semelab
bds16x.pdf