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BDS19 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDS19
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 90 W
   Tensión colector-emisor (Vce): 150 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
 

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BDS19 Datasheet (PDF)

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BDS19

isc Silicon PNP Power Transistor BDS19DESCRIPTIONHigh Voltage: V = -150V(Min)CEVLow Saturation Voltage-: V = -1.5V(Max)@ I = -4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose power.ABSOLUTE MAXIMUM RATINGS(T =25)a

 0.1. Size:76K  semelab
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BDS19

BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)

 0.2. Size:76K  semelab
 bds19smd.pdf pdf_icon

BDS19

BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SD60 | 2T3512 | MMBT2907AWT1 | DTC015TEB | 2SC5150 | DT600-450 | 2SB642

 

 
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