BDS19 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDS19
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-emisor (Vce): 150 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BDS19
BDS19 Datasheet (PDF)
bds19.pdf
isc Silicon PNP Power Transistor BDS19DESCRIPTIONHigh Voltage: V = -150V(Min)CEVLow Saturation Voltage-: V = -1.5V(Max)@ I = -4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose power.ABSOLUTE MAXIMUM RATINGS(T =25)a
bds19smd05.pdf
BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)
bds19smd.pdf
BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)
Otros transistores... BDS15 , BDS15SM , BDS16 , BDS16SM , BDS17 , BDS17SM , BDS18 , BDS18SM , S9013 , BDS19SM , BDS20 , BDS20SM , BDS21 , BDS21SM , BDS28A , BDS28ASM , BDS28B .
