BDS19 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDS19
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
BDS19 Transistor Equivalent Substitute - Cross-Reference Search
BDS19 Datasheet (PDF)
bds19.pdf
isc Silicon PNP Power Transistor BDS19DESCRIPTIONHigh Voltage: V = -150V(Min)CEVLow Saturation Voltage-: V = -1.5V(Max)@ I = -4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose power.ABSOLUTE MAXIMUM RATINGS(T =25)a
bds19smd05.pdf
BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)
bds19smd.pdf
BDS18 BDS18SMD BDS18SMD05BDS19 BDS19SMD BDS19SMD05SILICON PNPMECHANICAL DATA (Dimensions in mm)EPITAXIAL BASE INTO220 METAL AND4.610.60.8SMD CERAMIC SURFACE MOUNTPACKAGES3.6Dia.FEATURES HERMETIC METAL OR CERAMIC1 2 3PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS1.0 SCREENING TO CECC LEVELS2.54 2.70 FULLY ISOLATED (METAL VERSION)
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
