BDS19 Specs and Replacement
Type Designator: BDS19
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
BDS19 Substitution
- BJT ⓘ Cross-Reference Search
BDS19 datasheet
isc Silicon PNP Power Transistor BDS19 DESCRIPTION High Voltage V = -150V(Min) CEV Low Saturation Voltage- V = -1.5V(Max)@ I = -4A CE(sat) C High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION) ... See More ⇒
BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION) ... See More ⇒
Detailed specifications: BDS15, BDS15SM, BDS16, BDS16SM, BDS17, BDS17SM, BDS18, BDS18SM, 2SD669A, BDS19SM, BDS20, BDS20SM, BDS21, BDS21SM, BDS28A, BDS28ASM, BDS28B
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