BDT29 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT29
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BDT29
BDT29 Datasheet (PDF)
bdt29 bdt29a bdt29b bdt29c.pdf
isc Silicon NPN Power Transistors BDT29/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29; 60V(Min)- BDT29ACEO(SUS)80V(Min)- BDT29B; 100V(Min)- BDT29CComplement to Type BDT30/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in out
bdt29 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C APPLICATIONS Designed for use in output stages of audio and televisio
bdt29f af bf cf df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS Designed for use
bdt29f bdt29af bdt29bf bdt29cf bdt29df.pdf
isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29F; 60V(Min)- BDT29AFCEO(SUS)80V(Min)- BDT29BF; 100V(Min)- BDT29CF120V(Min)- BDT29DFComplement to Type BDT30F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N6521
History: 2N6521
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050