All Transistors. BDT29 Datasheet

 

BDT29 Datasheet and Replacement


   Type Designator: BDT29
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
 

 BDT29 Substitution

   - BJT ⓘ Cross-Reference Search

   

BDT29 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
 bdt29 bdt29a bdt29b bdt29c.pdf pdf_icon

BDT29

isc Silicon NPN Power Transistors BDT29/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29; 60V(Min)- BDT29ACEO(SUS)80V(Min)- BDT29B; 100V(Min)- BDT29CComplement to Type BDT30/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in out

 ..2. Size:158K  inchange semiconductor
 bdt29 a b c.pdf pdf_icon

BDT29

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C APPLICATIONS Designed for use in output stages of audio and televisio

 0.1. Size:160K  inchange semiconductor
 bdt29f af bf cf df.pdf pdf_icon

BDT29

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS Designed for use

 0.2. Size:214K  inchange semiconductor
 bdt29f bdt29af bdt29bf bdt29cf bdt29df.pdf pdf_icon

BDT29

isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29F; 60V(Min)- BDT29AFCEO(SUS)80V(Min)- BDT29BF; 100V(Min)- BDT29CF120V(Min)- BDT29DFComplement to Type BDT30F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA

SHOW MORE

Datasheet: BDS29A , BDS29ASM , BDS29B , BDS29BSM , BDS29C , BDS29CSM , BDT20 , BDT21 , MPSA42 , BDT29A , BDT29AF , BDT29B , BDT29BF , BDT29C , BDT29CF , BDT29DF , BDT29F .

History: 2SC3951 | DTN9000 | 3DG1815M | 40577 | BD546A | GC221 | TN2923

Keywords - BDT29 transistor datasheet

 BDT29 cross reference
 BDT29 equivalent finder
 BDT29 lookup
 BDT29 substitution
 BDT29 replacement

 

 
Back to Top

 


 
.