BDT29
Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT29
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO220
BDT29
Transistor Equivalent Substitute - Cross-Reference Search
BDT29
Datasheet (PDF)
..1. Size:211K inchange semiconductor
bdt29 bdt29a bdt29b bdt29c.pdf 
isc Silicon NPN Power Transistors BDT29/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29; 60V(Min)- BDT29ACEO(SUS)80V(Min)- BDT29B; 100V(Min)- BDT29CComplement to Type BDT30/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in out
..2. Size:158K inchange semiconductor
bdt29 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C APPLICATIONS Designed for use in output stages of audio and televisio
0.1. Size:160K inchange semiconductor
bdt29f af bf cf df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS Designed for use
0.2. Size:214K inchange semiconductor
bdt29f bdt29af bdt29bf bdt29cf bdt29df.pdf
isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.4AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT29F; 60V(Min)- BDT29AFCEO(SUS)80V(Min)- BDT29BF; 100V(Min)- BDT29CF120V(Min)- BDT29DFComplement to Type BDT30F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationA
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