BDT29AF Todos los transistores

 ..1. Size:214K  inchange semiconductor
 bdt29f bdt29af bdt29bf bdt29cf bdt29df.pdf

isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 40(Min)@ I = 0.4A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT29F; 60V(Min)- BDT29AF CEO(SUS) 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operation A

 8.1. Size:211K  inchange semiconductor
 bdt29 bdt29a bdt29b bdt29c.pdf

isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = 0.4A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT29; 60V(Min)- BDT29A CEO(SUS) 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in out

 9.1. Size:160K  inchange semiconductor
 bdt29f af bf cf df.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS Designed for use

 9.2. Size:158K  inchange semiconductor
 bdt29 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C APPLICATIONS Designed for use in output stages of audio and televisio