BDT29AF pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDT29AF Specs and Replacement

Type Designator: BDT29AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 14 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220F

BDT29AF Substitution

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BDT29AF datasheet

..1. Size:214K inchange semiconductor

bdt29f bdt29af bdt29bf bdt29cf bdt29df.pdf pdf_icon

isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 40(Min)@ I = 0.4A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT29F; 60V(Min)- BDT29AF CEO(SUS) 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operation A... See More ⇒

8.1. Size:211K inchange semiconductor

bdt29 bdt29a bdt29b bdt29c.pdf pdf_icon

isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = 0.4A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT29; 60V(Min)- BDT29A CEO(SUS) 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in out... See More ⇒

9.1. Size:160K inchange semiconductor

bdt29f af bf cf df.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF Complement to Type BDT30F/AF/BF/CF/DF APPLICATIONS Designed for use ... See More ⇒

9.2. Size:158K inchange semiconductor

bdt29 a b c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C APPLICATIONS Designed for use in output stages of audio and televisio... See More ⇒

Detailed specifications: BDS29B, BDS29BSM, BDS29C, BDS29CSM, BDT20, BDT21, BDT29, BDT29A, A42, BDT29B, BDT29BF, BDT29C, BDT29CF, BDT29DF, BDT29F, BDT30, BDT30A