BDT32B Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT32B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO220
Búsqueda de reemplazo de BDT32B
- Selecciónⓘ de transistores por parámetros
BDT32B datasheet
bdt32 bdt32a bdt32b bdt32c.pdf
isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32; -60V(Min)- BDT32A CEO(SUS) -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i
bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdf
isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32F; -60V(Min)- BDT32AF CEO(SUS) -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat
bdt32f af bf cf df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo
bdt32 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general
Otros transistores... BDT31BF , BDT31C , BDT31CF , BDT31DF , BDT31F , BDT32 , BDT32A , BDT32AF , BC557 , BDT32BF , BDT32C , BDT32CF , BDT32DF , BDT32F , BDT41 , BDT41A , BDT41AF .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bd139 | 2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor | irf640n | 2n3904