BDT32B. Аналоги и основные параметры
Наименование производителя: BDT32B
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO220
Аналоги (замена) для BDT32B
- подборⓘ биполярного транзистора по параметрам
BDT32B даташит
bdt32 bdt32a bdt32b bdt32c.pdf
isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32; -60V(Min)- BDT32A CEO(SUS) -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i
bdt32f bdt32af bdt32bf bdt32cf bdt32df.pdf
isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT32F; -60V(Min)- BDT32AF CEO(SUS) -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat
bdt32f af bf cf df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF Complement to Type BDT31F/AF/BF/CF/DF APPLICATIONS Designed fo
bdt32 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= -1.0A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C Complement to Type BDT31/A/B/C APPLICATIONS Designed for use in audio output stages and general
Другие транзисторы: BDT31BF, BDT31C, BDT31CF, BDT31DF, BDT31F, BDT32, BDT32A, BDT32AF, BC557, BDT32BF, BDT32C, BDT32CF, BDT32DF, BDT32F, BDT41, BDT41A, BDT41AF
History: 2SA923-2 | 2SA923-1 | 2SC1509 | FMMT3641 | CD9014C | BDT32BF | DTA143XE
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