BDT42F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT42F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO220F
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BDT42F datasheet
bdt42f-af-bf-cf bdt42f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF APPLICATIONS Designed for use in general purpose ampl
bdt42f bdt42af bdt42bf bdt42cf.pdf
isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT42F; -60V(Min)- BDT42AF CEO(SUS) -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design
bdt42 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C APPLICATIONS Designed for use in general purpose amplifer and swi
bdt42 bdt42a bdt42b bdt42c.pdf
isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT42; -60V(Min)- BDT42A CEO(SUS) -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i
Otros transistores... BDT41F , BDT42 , BDT42A , BDT42AF , BDT42B , BDT42BF , BDT42C , BDT42CF , 2SA1837 , BDT51 , BDT52 , BDT53 , BDT54 , BDT55 , BDT56 , BDT57 , BDT58 .
History: SK3841 | BSW23
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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