BDT42F - описание и поиск аналогов

 

BDT42F. Аналоги и основные параметры

Наименование производителя: BDT42F

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 3 MHz

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: TO220F

 Аналоги (замена) для BDT42F

- подборⓘ биполярного транзистора по параметрам

 

BDT42F даташит

 ..1. Size:106K  inchange semiconductor
bdt42f-af-bf-cf bdt42f af bf cf.pdfpdf_icon

BDT42F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF APPLICATIONS Designed for use in general purpose ampl

 ..2. Size:216K  inchange semiconductor
bdt42f bdt42af bdt42bf bdt42cf.pdfpdf_icon

BDT42F

isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT42F; -60V(Min)- BDT42AF CEO(SUS) -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

 9.1. Size:157K  inchange semiconductor
bdt42 a b c.pdfpdf_icon

BDT42F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C APPLICATIONS Designed for use in general purpose amplifer and swi

 9.2. Size:217K  inchange semiconductor
bdt42 bdt42a bdt42b bdt42c.pdfpdf_icon

BDT42F

isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT42; -60V(Min)- BDT42A CEO(SUS) -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i

Другие транзисторы: BDT41F, BDT42, BDT42A, BDT42AF, BDT42B, BDT42BF, BDT42C, BDT42CF, 2SA1837, BDT51, BDT52, BDT53, BDT54, BDT55, BDT56, BDT57, BDT58

 

 

 

 

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