Биполярный транзистор BDT42F - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDT42F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220F
BDT42F Datasheet (PDF)
bdt42f-af-bf-cf bdt42f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF Complement to Type BDT41F/AF/BF/CF APPLICATIONS Designed for use in general purpose ampl
bdt42f bdt42af bdt42bf bdt42cf.pdf
isc Silicon PNP Power Transistors BDT42F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42F; -60V(Min)- BDT42AFCEO(SUS)-80V(Min)- BDT42BF; -100V(Min)- BDT42CFComplement to Type BDT41F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign
bdt42 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C Complement to Type BDT41/A/B/C APPLICATIONS Designed for use in general purpose amplifer and swi
bdt42 bdt42a bdt42b bdt42c.pdf
isc Silicon PNP Power Transistors BDT42/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT42; -60V(Min)- BDT42ACEO(SUS)-80V(Min)- BDT42B; -100V(Min)- BDT42CComplement to Type BDT41/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050