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BDT60CF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDT60CF
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 17 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1.5 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220F

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BDT60CF Datasheet (PDF)

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BDT60CF
BDT60CF

isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60F; -80V(Min)- BDT60AFCEO(SUS)-100V(Min)- BDT60BF; -120V(Min)- BDT60CFComplement to Type BDT61F/61AF/61BF/61CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPP

 8.1. Size:216K  inchange semiconductor
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BDT60CF
BDT60CF

isc Silicon PNP Darlington Power Transistors BDT60/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60; -80V(Min)- BDT60A;CEO(SUS)-100V(Min)- BDT60B; -120V(Min)- BDT60CComplement to Type BDT61/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi

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bdt60f-af-bf-cf bdt60f af bf cf.pdf

BDT60CF
BDT60CF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= -1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS Designed for use in

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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