BDT60CF Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT60CF
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220F
BDT60CF Transistor Equivalent Substitute - Cross-Reference Search
BDT60CF Datasheet (PDF)
bdt60f bdt60af bdt60bf bdt60cf.pdf
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60F; -80V(Min)- BDT60AFCEO(SUS)-100V(Min)- BDT60BF; -120V(Min)- BDT60CFComplement to Type BDT61F/61AF/61BF/61CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPP
bdt60 bdt60a bdt60b bdt60c.pdf
isc Silicon PNP Darlington Power Transistors BDT60/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60; -80V(Min)- BDT60A;CEO(SUS)-100V(Min)- BDT60B; -120V(Min)- BDT60CComplement to Type BDT61/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi
bdt60f-af-bf-cf bdt60f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= -1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS Designed for use in
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
