BDT60L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT60L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1.5 MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BDT60L
BDT60L Datasheet (PDF)
bdt60 bdt60a bdt60b bdt60c.pdf
isc Silicon PNP Darlington Power Transistors BDT60/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60; -80V(Min)- BDT60A;CEO(SUS)-100V(Min)- BDT60B; -120V(Min)- BDT60CComplement to Type BDT61/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesi
bdt60f-af-bf-cf bdt60f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= -1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS Designed for use in
bdt60f bdt60af bdt60bf bdt60cf.pdf
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT60F; -80V(Min)- BDT60AFCEO(SUS)-100V(Min)- BDT60BF; -120V(Min)- BDT60CFComplement to Type BDT61F/61AF/61BF/61CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPP
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
