BDT60L Datasheet. Specs and Replacement
Type Designator: BDT60L 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO220
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BDT60L datasheet
bdt60 bdt60a bdt60b bdt60c.pdf ![]()
isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION DC Current Gain -h = 750(Min)@ I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT60; -80V(Min)- BDT60A; CEO(SUS) -100V(Min)- BDT60B; -120V(Min)- BDT60C Complement to Type BDT61/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi... See More ⇒
bdt60f-af-bf-cf bdt60f af bf cf.pdf ![]()
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= -1.5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS Designed for use in ... See More ⇒
bdt60f bdt60af bdt60bf bdt60cf.pdf ![]()
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION DC Current Gain -h = 750(Min)@ I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT60F; -80V(Min)- BDT60AF CEO(SUS) -100V(Min)- BDT60BF; -120V(Min)- BDT60CF Complement to Type BDT61F/61AF/61BF/61CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APP... See More ⇒
Detailed specifications: BDT60, BDT60A, BDT60AF, BDT60B, BDT60BF, BDT60C, BDT60CF, BDT60F, A1013, BDT61, BDT61A, BDT61AF, BDT61B, BDT61BF, BDT61C, BDT61CF, BDT61F
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