BDT61CF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT61CF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 17 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1.5 MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BDT61CF
BDT61CF Datasheet (PDF)
bdt61cf.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61CFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
bdt61 bdt61a bdt61b bdt61c.pdf
isc Silicon NPN Darlington Power Transistors BDT61/A/B/CDESCRIPTIONDC Current Gain -h = 750(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT61; 80V(Min)- BDT61A;CEO(SUS)100V(Min)- BDT61B; 120V(Min)- BDT61CComplement to Type BDT60/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
bdt61f.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61FDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
bdt61 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= 1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C APPLICATIONS Designed for use in audio amplifier output
bdt61bf.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61BFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60BFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
bdt61af.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDT61AFDESCRIPTIONHigh DC Current GainLow Saturation VoltageComplement to Type BDT60AFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
