BDT61CF pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDT61CF Specs and Replacement

Type Designator: BDT61CF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 17 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220F

BDT61CF Substitution

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BDT61CF datasheet

..1. Size:213K inchange semiconductor

bdt61cf.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61CF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

8.1. Size:215K inchange semiconductor

bdt61 bdt61a bdt61b bdt61c.pdf pdf_icon

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -h = 750(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT61; 80V(Min)- BDT61A; CEO(SUS) 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed ... See More ⇒

9.1. Size:213K inchange semiconductor

bdt61f.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

9.2. Size:302K inchange semiconductor

bdt61 a b c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -hFE = 750(Min)@ IC= 1.5A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C APPLICATIONS Designed for use in audio amplifier output... See More ⇒