BDT64CF Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT64CF
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 22 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de BDT64CF
BDT64CF datasheet
bdt64f bdt64af bdt64bf bdt64cf.pdf
isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDT65F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM
bdt64 bdt64a bdt64b bdt64c.pdf
isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDT65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(
bdt64 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U
Otros transistores... BDT63F , BDT63-TO63 , BDT64 , BDT64A , BDT64AF , BDT64B , BDT64BF , BDT64C , B647 , BDT64F , BDT65 , BDT65A , BDT65AF , BDT65B , BDT65BF , BDT65C , BDT65CF .
Liste
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