All Transistors. BDT64CF Datasheet

 

BDT64CF Datasheet and Replacement


   Type Designator: BDT64CF
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 22 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220F
 

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BDT64CF Datasheet (PDF)

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BDT64CF

isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CFDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM

 8.1. Size:201K  inchange semiconductor
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BDT64CF

isc Silicon PNP Darlington Power Transistor BDT64/A/B/CDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(

 9.1. Size:478K  no
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BDT64CF

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BDT64CF

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

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Datasheet: BDT63F , BDT63-TO63 , BDT64 , BDT64A , BDT64AF , BDT64B , BDT64BF , BDT64C , 2SD882 , BDT64F , BDT65 , BDT65A , BDT65AF , BDT65B , BDT65BF , BDT65C , BDT65CF .

History: CZ1081 | MPQ2221AR

Keywords - BDT64CF transistor datasheet

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