BDT65F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT65F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 22 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 2000
Encapsulados: TO220F
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BDT65F datasheet
bdt65f-af-bf-cf bdt65f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER V
bdt65f bdt65af bdt65bf bdt65cf.pdf
isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -I = 12A C High DC Current Gain-h = 1000(Min)@ I = 5A FE C Complement to Type BDT64F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RA
bdt65 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNI
Otros transistores... BDT64F, BDT65, BDT65A, BDT65AF, BDT65B, BDT65BF, BDT65C, BDT65CF, BD139, BDT81, BDT81F, BDT82, BDT82F, BDT83, BDT83F, BDT84, BDT84F
History: BDT65BF
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