BDT65F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT65F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 22 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 2000

Encapsulados: TO220F

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BDT65F datasheet

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BDT65F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER V

 ..2. Size:218K  inchange semiconductor
bdt65f bdt65af bdt65bf bdt65cf.pdf pdf_icon

BDT65F

isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -I = 12A C High DC Current Gain-h = 1000(Min)@ I = 5A FE C Complement to Type BDT64F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RA

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BDT65F

 9.2. Size:168K  inchange semiconductor
bdt65 a b c.pdf pdf_icon

BDT65F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNI

Otros transistores... BDT64F, BDT65, BDT65A, BDT65AF, BDT65B, BDT65BF, BDT65C, BDT65CF, BD139, BDT81, BDT81F, BDT82, BDT82F, BDT83, BDT83F, BDT84, BDT84F