BDT83F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT83F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 21 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar BDT83F
BDT83F Datasheet (PDF)
bdt81f bdt83f bdt85f bdt87f.pdf
isc Silicon NPN Power Transistors BDT81F/83F/85F/87FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81F; 80V(Min)- BDT83F;CEO(SUS)100V(Min)- BDT85F; 120V(Min)- BDT87FComplement to Type BDT82F/84F/86F/88FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt81 bdt83 bdt85 bdt87.pdf
isc Silicon NPN Power Transistors BDT81/83/85/87DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81; 80V(Min)- BDT83;CEO(SUS)100V(Min)- BDT85; 120V(Min)- BDT87Complement to Type BDT82/84/86/88Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
