BDT83F Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT83F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 21 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220F
BDT83F Transistor Equivalent Substitute - Cross-Reference Search
BDT83F Datasheet (PDF)
bdt81f bdt83f bdt85f bdt87f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistors BDT81F/83F/85F/87FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81F; 80V(Min)- BDT83F;CEO(SUS)100V(Min)- BDT85F; 120V(Min)- BDT87FComplement to Type BDT82F/84F/86F/88FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt81 bdt83 bdt85 bdt87.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistors BDT81/83/85/87DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81; 80V(Min)- BDT83;CEO(SUS)100V(Min)- BDT85; 120V(Min)- BDT87Complement to Type BDT82/84/86/88Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .