BDT85 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT85
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO220
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BDT85 datasheet
bdt81 bdt83 bdt85 bdt87.pdf
isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81; 80V(Min)- BDT83; CEO(SUS) 100V(Min)- BDT85; 120V(Min)- BDT87 Complement to Type BDT82/84/86/88 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt81f bdt83f bdt85f bdt87f.pdf
isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION DC Current Gain -h = 40(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT81F; 80V(Min)- BDT83F; CEO(SUS) 100V(Min)- BDT85F; 120V(Min)- BDT87F Complement to Type BDT82F/84F/86F/88F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed
Otros transistores... BDT81 , BDT81F , BDT82 , BDT82F , BDT83 , BDT83F , BDT84 , BDT84F , TIP41 , BDT85F , BDT86 , BDT86F , BDT87 , BDT87F , BDT88 , BDT88F , BDT91 .
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