BDT85 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT85
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO220
BDT85 Transistor Equivalent Substitute - Cross-Reference Search
BDT85 Datasheet (PDF)
bdt81 bdt83 bdt85 bdt87.pdf
isc Silicon NPN Power Transistors BDT81/83/85/87DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81; 80V(Min)- BDT83;CEO(SUS)100V(Min)- BDT85; 120V(Min)- BDT87Complement to Type BDT82/84/86/88Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf
PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.
bdt81f bdt83f bdt85f bdt87f.pdf
isc Silicon NPN Power Transistors BDT81F/83F/85F/87FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)- BDT81F; 80V(Min)- BDT83F;CEO(SUS)100V(Min)- BDT85F; 120V(Min)- BDT87FComplement to Type BDT82F/84F/86F/88FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
