BDT88F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistors BDT82F/84F/86F/88FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82F; -80V(Min)- BDT84F;CEO(SUS)-100V(Min)- BDT86F; -120V(Min)- BDT88FComplement to Type BDT81F/83F/85F/87FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes

PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT88 DESCRIPTION With TO-220C package Complement to type BDT87 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VAL

isc Silicon PNP Power Transistors BDT82/84/86/88DESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82; -80V(Min)- BDT84;CEO(SUS)-100V(Min)- BDT86; -120V(Min)- BDT88Complement to Type BDT81/83/85/87Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for us