BDT88F Todos los transistores

 ..1. Size:217K  inchange semiconductor
 bdt82f bdt84f bdt86f bdt88f.pdf

isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82F; -80V(Min)- BDT84F; CEO(SUS) -100V(Min)- BDT86F; -120V(Min)- BDT88F Complement to Type BDT81F/83F/85F/87F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

 9.1. Size:353K  comset
 bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf

PNP BDT82 BDT84 BDT86 BDT88 NPN BDT81 BDT83 BDT85 BDT87 SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 BDT83 BDT85 BDT87.

 9.2. Size:58K  inchange semiconductor
 bdt88.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT88 DESCRIPTION With TO-220C package Complement to type BDT87 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

 9.3. Size:217K  inchange semiconductor
 bdt82 bdt84 bdt86 bdt88.pdf

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION DC Current Gain -h = 40(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT82; -80V(Min)- BDT84; CEO(SUS) -100V(Min)- BDT86; -120V(Min)- BDT88 Complement to Type BDT81/83/85/87 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for us