Справочник транзисторов. BDT88F

 

Биполярный транзистор BDT88F - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BDT88F
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 21 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO220F

 Аналоги (замена) для BDT88F

 

 

BDT88F Datasheet (PDF)

 ..1. Size:217K  inchange semiconductor
bdt82f bdt84f bdt86f bdt88f.pdf

BDT88F
BDT88F

isc Silicon PNP Power Transistors BDT82F/84F/86F/88FDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82F; -80V(Min)- BDT84F;CEO(SUS)-100V(Min)- BDT86F; -120V(Min)- BDT88FComplement to Type BDT81F/83F/85F/87FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes

 9.1. Size:353K  comset
bdt81-bdt82-bdt83-bdt84-bdt85-bdt86-bdt87-bdt88.pdf

BDT88F
BDT88F

PNP BDT82 BDT84 BDT86 BDT88NPN BDT81 BDT83 BDT85 BDT87SILICON POWER TRANSISTORSILICON POWER TRANSISTORThe BDT82 BDT84 BDT86 BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope.They are intended for use in audio output stages and general amplifier and switching appications.NPN complements are BDT81 BDT83 BDT85 BDT87.

 9.2. Size:58K  inchange semiconductor
bdt88.pdf

BDT88F
BDT88F

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT88 DESCRIPTION With TO-220C package Complement to type BDT87 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VAL

 9.3. Size:217K  inchange semiconductor
bdt82 bdt84 bdt86 bdt88.pdf

BDT88F
BDT88F

isc Silicon PNP Power Transistors BDT82/84/86/88DESCRIPTIONDC Current Gain -h = 40(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT82; -80V(Min)- BDT84;CEO(SUS)-100V(Min)- BDT86; -120V(Min)- BDT88Complement to Type BDT81/83/85/87Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for us

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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