BDT92 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT92
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BDT92
BDT92 Datasheet (PDF)
bdt92 bdt94 bdt96.pdf
isc Silicon PNP Power Transistor BDT92/94/96DESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92; -80V(Min)- BDT94;CEO(SUS)-100V(Min)- BDT96Complement to Type BDT91/93/95Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages an
bdt92.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT92 DESCRIPTION With TO-220C package Complement to type BDT91 APPLICATIONS For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER COND
bdt92f bdt94f bdt96f.pdf
isc Silicon PNP Power Transistor BDT92F/94F/96FDESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92F; -80V(Min)- BDT94F;CEO(SUS)-100V(Min)- BDT96FComplement to Type BDT91F/93F/95FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
