BDT92 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT92
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220
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BDT92 datasheet
bdt92 bdt94 bdt96.pdf
isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92; -80V(Min)- BDT94; CEO(SUS) -100V(Min)- BDT96 Complement to Type BDT91/93/95 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages an
bdt92.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT92 DESCRIPTION With TO-220C package Complement to type BDT91 APPLICATIONS For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER COND
bdt92f bdt94f bdt96f.pdf
isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92F; -80V(Min)- BDT94F; CEO(SUS) -100V(Min)- BDT96F Complement to Type BDT91F/93F/95F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output
Otros transistores... BDT86 , BDT86F , BDT87 , BDT87F , BDT88 , BDT88F , BDT91 , BDT91F , D882 , BDT92F , BDT93 , BDT93F , BDT94 , BDT94F , BDT95 , BDT95F , BDT96 .
History: MP1555A | 2SC309
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