BDT92 Datasheet and Replacement
Type Designator: BDT92
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
BDT92 Substitution
BDT92 Datasheet (PDF)
bdt92 bdt94 bdt96.pdf

isc Silicon PNP Power Transistor BDT92/94/96DESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92; -80V(Min)- BDT94;CEO(SUS)-100V(Min)- BDT96Complement to Type BDT91/93/95Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages an
bdt92.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT92 DESCRIPTION With TO-220C package Complement to type BDT91 APPLICATIONS For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER COND
bdt92f bdt94f bdt96f.pdf

isc Silicon PNP Power Transistor BDT92F/94F/96FDESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92F; -80V(Min)- BDT94F;CEO(SUS)-100V(Min)- BDT96FComplement to Type BDT91F/93F/95FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output
Datasheet: BDT86 , BDT86F , BDT87 , BDT87F , BDT88 , BDT88F , BDT91 , BDT91F , A1941 , BDT92F , BDT93 , BDT93F , BDT94 , BDT94F , BDT95 , BDT95F , BDT96 .
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