BDT92F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDT92F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO220F

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BDT92F datasheet

 ..1. Size:217K  inchange semiconductor
 bdt92f bdt94f bdt96f.pdf pdf_icon

BDT92F

isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92F; -80V(Min)- BDT94F; CEO(SUS) -100V(Min)- BDT96F Complement to Type BDT91F/93F/95F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output

 9.1. Size:217K  inchange semiconductor
 bdt92 bdt94 bdt96.pdf pdf_icon

BDT92F

isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92; -80V(Min)- BDT94; CEO(SUS) -100V(Min)- BDT96 Complement to Type BDT91/93/95 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages an

 9.2. Size:58K  inchange semiconductor
 bdt92.pdf pdf_icon

BDT92F

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT92 DESCRIPTION With TO-220C package Complement to type BDT91 APPLICATIONS For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER COND

Otros transistores... BDT86F, BDT87, BDT87F, BDT88, BDT88F, BDT91, BDT91F, BDT92, BC557, BDT93, BDT93F, BDT94, BDT94F, BDT95, BDT95F, BDT96, BDT96F