BDT92F Datasheet, Equivalent, Cross Reference Search
Type Designator: BDT92F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220F
BDT92F Transistor Equivalent Substitute - Cross-Reference Search
BDT92F Datasheet (PDF)
bdt92f bdt94f bdt96f.pdf
isc Silicon PNP Power Transistor BDT92F/94F/96FDESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92F; -80V(Min)- BDT94F;CEO(SUS)-100V(Min)- BDT96FComplement to Type BDT91F/93F/95FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output
bdt92 bdt94 bdt96.pdf
isc Silicon PNP Power Transistor BDT92/94/96DESCRIPTIONDC Current Gain- h = 20~200@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)- BDT92; -80V(Min)- BDT94;CEO(SUS)-100V(Min)- BDT96Complement to Type BDT91/93/95Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output stages an
bdt92.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT92 DESCRIPTION With TO-220C package Complement to type BDT91 APPLICATIONS For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER COND
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BSXE94
