BDT94 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDT94
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220
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BDT94 datasheet
bdt92 bdt94 bdt96.pdf
isc Silicon PNP Power Transistor BDT92/94/96 DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92; -80V(Min)- BDT94; CEO(SUS) -100V(Min)- BDT96 Complement to Type BDT91/93/95 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output stages an
bdt92f bdt94f bdt96f.pdf
isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION DC Current Gain- h = 20 200@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min)- BDT92F; -80V(Min)- BDT94F; CEO(SUS) -100V(Min)- BDT96F Complement to Type BDT91F/93F/95F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output
Otros transistores... BDT88 , BDT88F , BDT91 , BDT91F , BDT92 , BDT92F , BDT93 , BDT93F , 2N3906 , BDT94F , BDT95 , BDT95F , BDT96 , BDT96F , BDV10 , BDV11 , BDV12 .
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