BDV65 Todos los transistores

 ..1. Size:170K  mospec
 bdv64 bdv65.pdf

A A A A

 ..2. Size:122K  inchange semiconductor
 bdv65 65a 65b 65c.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV65/65A/65B/65C DESCRIPTION With TO-3PN package Complement to type BDV64/64A/64B/64C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

 ..3. Size:219K  inchange semiconductor
 bdv65 bdv65a bdv65b bdv65c.pdf

isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION Collector Current -I = 12A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Complement to Type BDV64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applicati

 ..4. Size:279K  inchange semiconductor
 bdv65 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION Collector Current -IC= 12A Collector-Emitter Saturation Voltage- VCE(sat)= 2.0V(Max.)@ IC= 5A Complement to Type BDV64/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=2

 0.1. Size:110K  motorola
 bdv64b bdv65b.pdf

Order this document MOTOROLA by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP Complementary Silicon Plastic BDV64B Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applica- tions. DARLINGTONS High DC Current Gain 10 AMPERES HFE = 1000 (min.) @ 5 Adc COMPLEMENTARY Monolithi

 0.2. Size:116K  onsemi
 bdv65bg.pdf

BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. http //onsemi.com Features 10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt Resistors POWER TRANSISTORS These