BDV65 Datasheet. Specs and Replacement
Type Designator: BDV65
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO218
BDV65 Substitution
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BDV65 datasheet
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV65/65A/65B/65C DESCRIPTION With TO-3PN package Complement to type BDV64/64A/64B/64C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO... See More ⇒
bdv65 bdv65a bdv65b bdv65c.pdf 
isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION Collector Current -I = 12A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Complement to Type BDV64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applicati... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION Collector Current -IC= 12A Collector-Emitter Saturation Voltage- VCE(sat)= 2.0V(Max.)@ IC= 5A Complement to Type BDV64/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=2... See More ⇒
Detailed specifications: BDV47, BDV48, BDV49, BDV50, BDV64, BDV64A, BDV64B, BDV64C, 9014, BDV65A, BDV65B, BDV65C, BDV66, BDV66A, BDV66B, BDV66C, BDV66D
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