BDV67A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDV67A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TOP3
Búsqueda de reemplazo de BDV67A
BDV67A datasheet
bdv67 bdv67a bdv67b bdv67c.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDV67/A/B/C DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier... See More ⇒
bdv67 bdv67d.pdf
isc Silicon NPN Darlington Power Transistor BDV67D DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSO... See More ⇒
bdv67 67a 67b 67c 67d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounti... See More ⇒
Otros transistores... BDV65B , BDV65C , BDV66 , BDV66A , BDV66B , BDV66C , BDV66D , BDV67 , D209L , BDV67B , BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 .
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