BDV67A Datasheet. Specs and Replacement
Type Designator: BDV67A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TOP3
BDV67A Substitution
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BDV67A datasheet
bdv67 bdv67a bdv67b bdv67c.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDV67/A/B/C DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier... See More ⇒
isc Silicon NPN Darlington Power Transistor BDV67D DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSO... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounti... See More ⇒
Detailed specifications: BDV65B, BDV65C, BDV66, BDV66A, BDV66B, BDV66C, BDV66D, BDV67, D209L, BDV67B, BDV67C, BDV67D, BDV91, BDV92, BDV93, BDV94, BDV95
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