All Transistors. BDV67A Datasheet

 

BDV67A Datasheet and Replacement


   Type Designator: BDV67A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TOP3
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BDV67A Datasheet (PDF)

 ..1. Size:196K  inchange semiconductor
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BDV67A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDV67/A/B/CDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifier

 9.1. Size:102K  mospec
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BDV67A

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 9.2. Size:220K  inchange semiconductor
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BDV67A

isc Silicon NPN Darlington Power Transistor BDV67DDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSO

 9.3. Size:122K  inchange semiconductor
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BDV67A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD264

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