BDW23B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BDW23B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar BDW23B

BDW23B Datasheet (PDF)

..1. Size:214K inchange semiconductor
bdw23 bdw23a bdw23b bdw23c.pdf

isc Silicon NPN Darlington Power Transistor BDW23/A/B/CDESCRIPTIONCollector Current -I = 6ACHigh DC Current Gain-h = 750(Min)@ I = 2AFE CComplement to Type BDW24/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio amplifiers applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

9.1. Size:38K fairchild semi
bdw23a.pdf

BDW23/A/B/CHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW24, BDW24A, BDW24B and BDW24C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BDW23 45 V: BDW23A 60 V: BDW23B 80 V: BDW23C

9.2. Size:116K inchange semiconductor
bdw23-a-b-c bdw23a-b-c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min)@ IC= 2A Complement to Type BDW24/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBDW23 45BDW23A 6

9.3. Size:169K inchange semiconductor
bdw23 a b c.pdf