BDW24C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BDW24/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW23, BDW23A, BDW23B and BDW23C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDW24 - 45 V BDW24A - 60 V BDW24B - 80 V

isc Silicon PNP Darlington Power Transistor BDW24/A/B/C DESCRIPTION Collector Current -I = -6A C High DC Current Gain-h = 750(Min)@ I = -2A FE C Complement to Type BDW23/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

BDW24, BDW24A, BDW24B, BDW24C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW23, BDW23A, BDW23B and BDW23C TO-220 PACKAGE (TOP VIEW) 50 W at 25 C Case Temperature 6 A Continuous Collector Current B 1 Minimum hFE of 750 at 2 A, 3 V C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 C case te

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW24/A/B/C DESCRIPTION Collector Current -IC= -6A High DC Current Gain-hFE= 750(Min)@ IC= -2A Complement to Type BDW23/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BDW24 -45 BDW24