BDW51 Todos los transistores

 

BDW51 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDW51

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 117 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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BDW51 datasheet

 ..1. Size:66K  st
bdw51 bdw52.pdf pdf_icon

BDW51

BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The BDW51C is a silicon epitaxial-base NPN TO-3 transistor in Jedec TO-3 metal case. It is intended for use in power

 ..2. Size:209K  inchange semiconductor
bdw51 bdw51a bdw51b bdw51c.pdf pdf_icon

BDW51

isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION Collector Current -I = 15A C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BDW51; 60V(Min)- BDW51A CEO(SUS) 80V(Min)- BDW51B; 100V(Min)- BDW51C Complement to Type BDW52/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and sw

 ..3. Size:268K  inchange semiconductor
bdw51 a b c.pdf pdf_icon

BDW51

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION Collector Current -IC= 15A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C Complement to Type BDW52/A/B/C APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE

 0.1. Size:11K  semelab
bdw51b.pdf pdf_icon

BDW51

BDW51B Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

Otros transistores... BDW40 , BDW41 , BDW42 , BDW43 , BDW44 , BDW45 , BDW46 , BDW48 , TIP122 , BDW51A , BDW51B , BDW51C , BDW52 , BDW52A , BDW52C , BDW53 , BDW53A .

 

 

 


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