BDW51 - описание и поиск аналогов

BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The BDW51C is a silicon epitaxial-base NPN TO-3 transistor in Jedec TO-3 metal case. It is intended for use in power

isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION Collector Current -I = 15A C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BDW51; 60V(Min)- BDW51A CEO(SUS) 80V(Min)- BDW51B; 100V(Min)- BDW51C Complement to Type BDW52/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and sw

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION Collector Current -IC= 15A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C Complement to Type BDW52/A/B/C APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE

BDW51B Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW51C DESCRIPTION With TO-3 package Complement to type BDW52C Excellent safe operating area APPLICATIONS For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings