BDW51B Todos los transistores

 

BDW51B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDW51B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 117 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

 Búsqueda de reemplazo de BDW51B

- Selecciónⓘ de transistores por parámetros

 

BDW51B datasheet

 ..1. Size:11K  semelab
bdw51b.pdf pdf_icon

BDW51B

BDW51B Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 ..2. Size:209K  inchange semiconductor
bdw51 bdw51a bdw51b bdw51c.pdf pdf_icon

BDW51B

isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION Collector Current -I = 15A C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BDW51; 60V(Min)- BDW51A CEO(SUS) 80V(Min)- BDW51B; 100V(Min)- BDW51C Complement to Type BDW52/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and sw

 9.1. Size:66K  st
bdw51 bdw52.pdf pdf_icon

BDW51B

BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The BDW51C is a silicon epitaxial-base NPN TO-3 transistor in Jedec TO-3 metal case. It is intended for use in power

 9.2. Size:116K  inchange semiconductor
bdw51c.pdf pdf_icon

BDW51B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW51C DESCRIPTION With TO-3 package Complement to type BDW52C Excellent safe operating area APPLICATIONS For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings

Otros transistores... BDW42 , BDW43 , BDW44 , BDW45 , BDW46 , BDW48 , BDW51 , BDW51A , 13007 , BDW51C , BDW52 , BDW52A , BDW52C , BDW53 , BDW53A , BDW53B , BDW53C .

History: UPTA520

 

 

 


History: UPTA520

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

tip31 transistor | 2sc1384 | mj21196g | irfb4115 | 21270 transistor | k3569 | irf640 datasheet | c945 transistor equivalent

 

 

↑ Back to Top
.