BDW51B Datasheet and Replacement

BDW51BDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

isc Silicon NPN Power Transistor BDW51/A/B/CDESCRIPTIONCollector Current -I = 15ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDW51; 60V(Min)- BDW51ACEO(SUS)80V(Min)- BDW51B; 100V(Min)- BDW51CComplement to Type BDW52/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and sw

BDW51CBDW52CSILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The BDW51C is a silicon epitaxial-base NPNTO-3transistor in Jedec TO-3 metal case. It is intendedfor use in power

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW51C DESCRIPTION With TO-3 package Complement to type BDW52C Excellent safe operating area APPLICATIONS For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDW51/A/B/C DESCRIPTION Collector Current -IC= 15A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C Complement to Type BDW52/A/B/C APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE