BDW52C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BDW52C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 117 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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BDW52C datasheet

 ..1. Size:210K  inchange semiconductor
bdw52 bdw52a bdw52b bdw52c.pdf pdf_icon

BDW52C

isc Silicon PNP Power Transistor BDW52/A/B/C DESCRIPTION Collector Current -I = -15A C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BDW52; -60V(Min)- BDW52A CEO(SUS) -80V(Min)- BDW52B; -100V(Min)- BDW52C Complement to Type BDW51/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear a

 ..2. Size:116K  inchange semiconductor
bdw52c.pdf pdf_icon

BDW52C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW52C DESCRIPTION With TO-3 package Complement to type BDW51C Excellent safe operating area APPLICATIONS For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating

 9.1. Size:66K  st
bdw51 bdw52.pdf pdf_icon

BDW52C

BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The BDW51C is a silicon epitaxial-base NPN TO-3 transistor in Jedec TO-3 metal case. It is intended for use in power

 9.2. Size:11K  semelab
bdw52b.pdf pdf_icon

BDW52C

BDW52B Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

Otros transistores... BDW46, BDW48, BDW51, BDW51A, BDW51B, BDW51C, BDW52, BDW52A, BC557, BDW53, BDW53A, BDW53B, BDW53C, BDW53D, BDW54, BDW54A, BDW54B