BDW52C Datasheet, Equivalent, Cross Reference Search
Type Designator: BDW52C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDW52C Transistor Equivalent Substitute - Cross-Reference Search
BDW52C Datasheet (PDF)
bdw52 bdw52a bdw52b bdw52c.pdf
isc Silicon PNP Power Transistor BDW52/A/B/CDESCRIPTIONCollector Current -I = -15ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDW52; -60V(Min)- BDW52ACEO(SUS)-80V(Min)- BDW52B; -100V(Min)- BDW52CComplement to Type BDW51/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear a
bdw52c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW52C DESCRIPTION With TO-3 package Complement to type BDW51C Excellent safe operating area APPLICATIONS For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum rating
bdw51 bdw52.pdf
BDW51CBDW52CSILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The BDW51C is a silicon epitaxial-base NPNTO-3transistor in Jedec TO-3 metal case. It is intendedfor use in power
bdw52b.pdf
BDW52BDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
bdw52a.pdf
BDW52ADimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
bdw52 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDW52/A/B/C DESCRIPTION Collector Current -IC= -15A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A -80V(Min)- BDW52B; -100V(Min)- BDW52C Complement to Type BDW51/A/B/C APPLICATIONS Designed for use in power linear and switching applications. ABS
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
