BDW83 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDW83 Datasheet (PDF)

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BDW83CBDW84CCOMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS BDW83C IS A SGS-THOMSON PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT1DESCRIPTION TO-218The BDW83C is a silicon epitaxial-base NPNpower monolithic Darlington transis

..2. Size:222K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor BDW83/A/B/CDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =

..3. Size:123K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D DESCRIPTION With TO-3PN package Complement to type BDW84/84A/84B/84C/84D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified ou

0.1. Size:218K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor BDW83CDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a