BDW83 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDW83
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 750
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BDW83
BDW83 Datasheet (PDF)
bdw83 bdw84.pdf
BDW83CBDW84CCOMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS BDW83C IS A SGS-THOMSON PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT1DESCRIPTION TO-218The BDW83C is a silicon epitaxial-base NPNpower monolithic Darlington transis
bdw83 bdw83a bdw83b bdw83c.pdf
isc Silicon NPN Darlington Power Transistor BDW83/A/B/CDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =
bdw83 83a 83b 83c 83d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D DESCRIPTION With TO-3PN package Complement to type BDW84/84A/84B/84C/84D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified ou
bdw83c.pdf
isc Silicon NPN Darlington Power Transistor BDW83CDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
bdw83d.pdf
isc Silicon NPN Darlington Power Transistor BDW83DDESCRIPTIONCollector Current -I = 15ACHigh DC Current Gain-h = 750(Min)@ I = 6AFE CComplement to Type BDW84DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: AT00570 | 2SB348 | MJD32 | 2SB373 | BC1073 | 2SA872F | BUS132
History: AT00570 | 2SB348 | MJD32 | 2SB373 | BC1073 | 2SA872F | BUS132
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050